Silicon-based semiconductor devices such as diodes and transistors have been around for 50 years.
During this time a tremendous development has taken place and today they are found in almost every electronic equipment and household. However, in certain important areas further progress is considered possible only by using material with superior fundamental properties compared to Silicon. Silicon Carbide is such a material with superior thermal conductivity, electric breakdown field and high bandgap. In applications like power electronics these fundamental properties provide critical advantages.