Conductive n-type SiC epitaxial substrates for power electronics

Norstel’s conductive n-type 4H single crystal SiC substrates are available in 100 mm diameter with a micropipe density down to less than 1 per cm2. The standard orientation is 4 degrees off-axis. The substrates are normally supplied with customer specified SiC epitaxial layers. For further information please download the Conductive SiC Product Flyer or contact us by e-mail at

100mm off axis n-type wafer

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