Silicon carbide epitaxy and SiC substrates

SiC Epitaxy

Norstel offers Silicon carbide (SiC) epitaxy growth on customer supplied substrates. Whether you are looking for regular deliveries in large volumes or specialised R&D structures in very limited quantities we are your right partner. For further information please download our Epi Service product flyer.

Conductive SiC substrates

Norstel has demonstrated 3” conductive substrates (4H). Product development targeting official product release is on-going and preparations for larger diameter products are on-going in parallel. We would be happy to discuss your requirements and present our products in detail including supplying first samples. Please contact us directly via the contact us link.

Semi-insulating SiC substrates

Norstel currently sells 2” semi-insulating Silicon carbide (SiC) substrates that have been developed and extensively verified within the major European microelectronics development program “Korrigan”. HTCVD crystal growth technology is the key to purer products. Larger diameter products are under development.

SiC grinding

When processing SiC substrates there is frequently a need to thin down the wafer and this is sometimes combined with a request for a specific surface structure. SiC is a very hard material and therefore these process steps are more demanding than for other semiconductors. Norstel has developed special processes to handle these tough challenges. We would be pleased to process your substrates.

SiC characterisation

Do you have SiC substrates, SiC epitaxial layers or GaN-on-SiC substrates that you would like to have fully characterised but you do not have the measurement tools available? We have an extensive set of characterisation tools so please send us your inquiry.